Ramp‐type junction parameter control by Ga doping of PrBa2Cu3O7−δ barriers
نویسندگان
چکیده
منابع مشابه
control of the optical properties of nanoparticles by laser fields
در این پایان نامه، درهمتنیدگی بین یک سیستم نقطه کوانتومی دوگانه(مولکول نقطه کوانتومی) و میدان مورد مطالعه قرار گرفته است. از آنتروپی ون نیومن به عنوان ابزاری برای بررسی درهمتنیدگی بین اتم و میدان استفاده شده و تاثیر پارامترهای مختلف، نظیر تونل زنی(که توسط تغییر ولتاژ ایجاد می شود)، شدت میدان و نسبت دو گسیل خودبخودی بر رفتار درجه درهمتنیدگی سیستم بررسی شده اشت.با تغییر هر یک از این پارامترها، در...
15 صفحه اولModeling GA Performance for Control Parameter Optimization
Optimization of the control parameters of genetic algorithms is often a time consuming and tedious task. In this work we take the meta-level genetic algorithm approach to control parameter optimization. We enhance this process by incorporating a neural network for tness evaluation. This neural network is trained to learn the complex interactions of the genetic algorithm control parameters and i...
متن کاملEffects of D-Doping on Characteristics of AlAs/GaAs Barriers Grown by Mba at 400 ??C
Effects of d-doping on barriers effective heights and series resistance of highly doped n-type GaAs/AIAs/GaAs/AlAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE) at 400?°C, have been studied. As it was expected, inclusion of an n+ d-doped layer at each hetero-interface has reduced the barriers heights and series resistance of the structure significantly, while p+ d-doped layers ha...
متن کاملThe effect of Ga-doping on the structural and optical properties of ZnO thin films prepared by spray pyrolysis
In this research, zinc oxide thin films with gallium impurity have been deposited using the spray pyrolysis technique. The structural and optical properties of these films are investigated as a function of gallium doping concentrations. The ZnO and ZnO:Ga films grown at a substrate temperature of 350 ºC with gallium doping concentrations from 1.0 to 5.0.%. The XRD analysis indicated that ZnO f...
متن کاملNanoscale Junction Formation by Gas-Phase Monolayer Doping.
A major challenge in transistor technology scaling is the formation of controlled ultrashallow junctions with nanometer-scale thickness and high spatial uniformity. Monolayer doping (MLD) is an efficient method to form such nanoscale junctions, where the self-limiting nature of semiconductor surfaces is utilized to form adsorbed monolayers of dopant-containing molecules followed by rapid therma...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1996
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.117912